Here is why gallium nitride (GaN) is the natural successor to silicon MOSFETs in the 100–650 V class of power devices.

This technical FAQ examines three modeling gaps identified in engineering literature and outlines algorithmic methods to address them.

A compensated Pt100 RTD circuit has 1 mV/°C DMM output, with linearization via positive feedback, pending Part 2 ...

This FAQ analyzes the open-drain physical layer and the nuances of register-level addressing to better understand I2C communication.

Abstract: In this study, the impact of capacitive coupling (CC) caused by the parasitic capacitance components of metal-oxide semiconductor field effect transistors (MOSFETs) on the data stored in a ...

Minecraft remains one of the best games of all time over a decade on from its release, but spending such a long time in one game could lead to you running out of ideas. We've been there: you've ...

Abstract: We present enhancement- and depletion-mode digital logic gates and circuits with back-gate biasing in a Four-pole high-electron-mobility transistor on Silicon technology. This work uses a 20 ...