Abstract: In this article, the design and characterization of a 1200 V, 200 A rated printed circuit board (PCB) embedded silicon carbide (SiC) MOSFET half-bridge is being presented. The layout of the ...
Abstract: The three-level active neutral point clamped (ANPC) inverter, utilizing wide bandgap switching devices such as silicon carbide (SiC), is emerging as a promising alternative to traditional ...
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