Renesas Electronics Corp. has developed two new circuit technologies for an embedded spin-transfer torque magnetoresistive random-access memory (STT-MRAM) test chip with fast read and write ...

Forbes contributors publish independent expert analyses and insights. I attended the 2024 IEEE Magnetics Society TMRC conference at the University of California in Berkeley. The sessions I attended ...

“Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is one of the leading candidates for embedded memory convergence in advanced technology nodes. It is particularly adapted to low-power ...

CHANDLER, Ariz.--(BUSINESS WIRE)--Everspin Technologies, Inc. (NASDAQ: MRAM), the world’s leading developer and manufacturer of Magnetoresistive Random Access Memory (MRAM) persistent memory solutions ...

In a recently published article in IEEE Electron Devices Magazine the authors, I was one of them, looked at the impact of external magnetic fields on spin tunnel torque magnetic random-access memories ...

A technical paper titled “Impact of external magnetic fields on STT-MRAM” was recently published by researchers at Univ. Grenoble Alpes, Everspin, GlobalFoundries, imec, et al. “This application note ...

A prototype MCU test chip with a 10.8 Mbit magnetoresistive random-access memory (MRAM) memory cell array—fabricated on a 22-nm embedded MRAM process—claims to accomplish a random read access ...

Announced at IEDM 2021: Confirmed Reduced Power Consumption and Increased Speed in Write Operations on 16 nm FinFET Logic Process Embedded STT-MRAM Test Chip TOKYO--(BUSINESS WIRE)--Renesas ...

MRAM chips are becoming more attractive than the projections suggest, and the company should benefit from that. The market is set to grow at high rates for the next decade. The company is very strong ...

It's a little too soon to tout MRAM's potential as a universal memory solution but the company is certainly benefiting from secular tailwinds. MRAM's persistence, performance, endurance and ...